Simulation of Submicrosecond Regimes of High-Voltage Reversibly-Switched Dynistors

摘要

Basing on 2D computer simulation of physical processes in high-voltagereversibly-switched dynistors (RSD) important peculiarities of theirsubmicrosecond pulse performance mechanisms have been studied. It ischaracteristic that on early stages of switching fronts rather great voltagespikes and dangerous delays in current rise are observed. These undesirablemanifestations are found to be eliminated due to appropriate reduction of thedoping in p-base. Following this way for RSD with blocking voltage of 2.5-5 kVat the value of reversibly pumped charge 5-10 uC/cm^2 one can diminished theswitching front duration up to 75-100 ns and lower. As for the current riserate it can be increased up to (20-30) A/cm^2/ns, i.e., more then the orderhigher of the similar parameter for the standard RSD. For the switching pulseamplitudes of few unites kA and with the total pulse duration of severalhundred nanoseconds the energy transmitted to the load can reach fractions andunits of joules per cycle at the power losses in RSD nearly 10% of thesevalues.